Interpretation of heavy ion cross section measurements

Author

Petersen, E.L.

Author_Institution

Fairfax, VI, USA

Volume

43

Issue

3

fYear

1996

fDate

6/1/1996 12:00:00 AM

Firstpage

952

Lastpage

959

Abstract

This paper discusses the information about a device that is contained in the experimental heavy ion cross section curve. The width and shape of the curve are shown to be determined by intra-cell variations of charge collection, not by cell to cell variations. If we assume that there is a unique charge that must appear on the transistor terminal, then the cross section may be described in terms of variation of effective charge collection depth across the device. Contours of constant charge collection can be determined from the parameters that describe the cross section curve. The effects of diffusion can be distinguished from the other charge collection processes

Keywords

CMOS integrated circuits; MOSFET; bipolar transistors; ion beam effects; CMOS RAMs; CMOS devices; LET spread; bipolar devices; charge collection depth; charge collection intra-cell variations; constant charge collection contours; cross section curve shape; cross section curve width; diffusion effects; heavy ion cross section measurements; transistor terminal; Argon; Energy loss; Extraterrestrial measurements; Fluctuations; Gaussian processes; Measurement standards; Shape; Space technology; Statistical distributions; Weibull distribution;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.510739

Filename

510739