Title :
IIIB-7 evidence of hole flow in silicon nitride for positive gate voltage
fDate :
12/1/1984 12:00:00 AM
Keywords :
Annealing; Charge carrier processes; Density measurement; Dielectrics; Electron traps; Nitrogen; Silicon; Stress measurement; Very large scale integration; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1984.21855
