DocumentCode
1095309
Title
IIIB-7 evidence of hole flow in silicon nitride for positive gate voltage
Author
Fu-Tai Liou
Volume
31
Issue
12
fYear
1984
fDate
12/1/1984 12:00:00 AM
Firstpage
1972
Lastpage
1972
Keywords
Annealing; Charge carrier processes; Density measurement; Dielectrics; Electron traps; Nitrogen; Silicon; Stress measurement; Very large scale integration; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1984.21855
Filename
1484140
Link To Document