Title :
n-step charge injection cancellation scheme for very accurate switched current circuits
Author :
Toumazou, Christofer ; Xiao, Shiwu
Author_Institution :
Dept. of Electr. & Electron. Eng., Imperial Coll. of Sci., Technol. & Med., London
fDate :
4/29/1994 12:00:00 AM
Abstract :
An n-step charge injection cancellation scheme for switched current (SI) circuits is presented. By modifying a recently proposed two-step SI cell so that fine memories can be cascaded, n-stage fine cell schemes are now possible. The technique has been applied to CMOS class A, class AB and GaAs class A second generation cells
Keywords :
CMOS integrated circuits; analogue processing circuits; linear integrated circuits; switched filters; CMOS; class A; class AB; fine memories; n-stage fine cell schemes; n-step charge injection cancellation scheme; sampled data filters; second generation cells; switched current circuits; two-step SI cell;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940486
