• DocumentCode
    1095314
  • Title

    Dynamic single event effects in a CMOS/thick SOI shift register

  • Author

    Gardic, F. ; Flament, O. ; Musseau, O. ; Brisset, C. ; Martinez, M. ; Brunet, J.P. ; Blanquart, L.

  • Author_Institution
    CEA, Centre d´´Etudes de Bruyeres-le-Chatel, France
  • Volume
    43
  • Issue
    3
  • fYear
    1996
  • fDate
    6/1/1996 12:00:00 AM
  • Firstpage
    960
  • Lastpage
    966
  • Abstract
    We describe transient effects induced by high energy protons in shift registers processed in a CMOS/thick SOI technology. Devices are tested in dynamic mode. The dependence of cross section on frequency, signal rise time, angle of incidence and proton energy is studied and interpreted
  • Keywords
    CMOS logic circuits; flip-flops; integrated circuit testing; proton effects; shift registers; silicon-on-insulator; transient analysis; CMOS/thick SOI shift register; angle of incidence dependence; cross section; dynamic mode testing; dynamic single event effects; flip-flops; frequency dependence; high energy protons; proton energy dependence; signal rise time dependence; transient effects; CMOS process; CMOS technology; Clocks; Flip-flops; Frequency; Protons; Shift registers; Space technology; Testing; Vehicle dynamics;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/23.510740
  • Filename
    510740
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1095314