An experimental survey of heavy ion induced dielectric rupture in Actel Field Programmable Gate Arrays (FPGAs)

Author

Swift, Gary ; Katz, Richard

Author_Institution

Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA

Volume

Issue

fYear

1996

fDate

6/1/1996 12:00:00 AM

Firstpage

967

Lastpage

972

Abstract

Irradiations and subsequent failure analyses were performed to investigate single event dielectric rupture (SEDR) in Actel FPGAs as a function of ion LET (linear energy transfer), angle, bias, temperature, feature size, and device type. The small cross sections imply acceptably low risk for most spacecraft uses

Keywords

failure analysis; field programmable gate arrays; integrated circuit reliability; integrated circuit testing; ion beam effects; space vehicle electronics; Actel FPGAs; angle dependence; bias dependence; cross sections; failure analyses; feature size dependence; field programmable gate arrays; heavy ion induced dielectric rupture; ion LET; single event dielectric rupture; spacecraft uses; temperature dependence; Circuit testing; Conductors; Dielectric devices; Field programmable gate arrays; Frequency; Laboratories; MOSFETs; Propulsion; Space technology; Temperature;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.510741

Filename

510741

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1095327