Facet oxidation of InGaAsP/InP and InGaAs/InP lasers

Author

Fukuda, Mitsuo

Author_Institution

Nippon Telegraph and Telephone Public Corporation, Kanagawa, Japan

Volume

19

Issue

11

fYear

1983

fDate

11/1/1983 12:00:00 AM

Firstpage

1692

Lastpage

1698

Abstract

The facet oxidation of InGaAsP/InP and InGaAs/InP lasers is investigated after aging under high constant optical output power or high current stress. Facet oxidation in InGaAsP/InP lasers is negligibly small under several thousand hours of practical operation. The thickness of oxide film increases in proportion to optical output power and logarithm of aging time. The growth rate of facet oxide film weakly depends on the junction temperature and the activation energy is estimated to be 0.07 eV within a experimental range between 25 and 150°C. The facet of InGaAs/InP lasers are oxidized more easily than that of InGaAsP/InP lasers but are about two orders of magnitude more stable against oxidation than that of AlGaAs/GaAs lasers.

Keywords

Gallium materials/lasers; Indium materials/devices; Laser thermal factors; Life estimation; Semiconductor device reliability; Semiconductor device thermal factors; Aging; Indium gallium arsenide; Indium phosphide; Laser stability; Optical films; Oxidation; Power generation; Power lasers; Stress; Temperature dependence;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/JQE.1983.1071767

Filename

1071767