DocumentCode :
1095379
Title :
IVA-7 properties of InxGa1-xAs-GaAs strained-layer quantum-well injection lasers
Author :
Laidig, W.D. ; Lin, Y.F. ; Caldwell, P.J.
Volume :
31
Issue :
12
fYear :
1984
fDate :
12/1/1984 12:00:00 AM
Firstpage :
1975
Lastpage :
1975
Keywords :
Degradation; Diode lasers; Gallium arsenide; Laboratories; Laser theory; Laser transitions; Molecular beam epitaxial growth; Optical pulses; Quantum well lasers; Temperature;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1984.21861
Filename :
1484146
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1095379
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