مرکز منطقه ای اطلاع رساني علوم و فناوري - IVB-1 High-power conductivity-modulated FET´s (COMFET´s) with p-type channel

DocumentCode :

1095398

Title :

IVB-1 High-power conductivity-modulated FET´s (COMFET´s) with p-type channel

Author :

Russell, J.P. ; Goodman, L.A. ; Goodman, A.M. ; Robinson, P.H. ; Neilson, Jeffrey M.

Volume :

Issue :

fYear :

1984

fDate :

12/1/1984 12:00:00 AM

Firstpage :

1975

Lastpage :

1976

Keywords :

Degradation; Electron devices; FETs; Fabrication; MOSFET circuits; Power MOSFET; Power supplies; Quantum computing; Quantum mechanics; Voltage;

fLanguage :

English

Journal_Title :

Electron Devices, IEEE Transactions on

Publisher :

ieee

ISSN :

0018-9383

Type :

jour

DOI :

10.1109/T-ED.1984.21863

Filename :

1484148

Link To Document :