Title :
Expression for the fermi energy in narrow-bandgap semiconductors
Author_Institution :
Bell Labs., Murray Hill, NJ, USA
fDate :
11/1/1983 12:00:00 AM
Abstract :
A simple differentiable expression is derived which yields the quasi-Fermi level as a function of the carrier concentration in various narrow-bandgap semiconductor devices, such as PbSnSe lasers, under both nondegenerate and moderately degenerate (lasing) conditions.
Keywords :
Lead materials/devices; Semiconductor lasers; Charge carrier density; Density measurement; Energy measurement; Integrated optics; Laser modes; Optical losses; Performance analysis; Photonic band gap; Semiconductor devices; Semiconductor lasers;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.1983.1071770
