• DocumentCode
    1095402
  • Title

    Expression for the fermi energy in narrow-bandgap semiconductors

  • Author

    Joyce, W.B.

  • Author_Institution
    Bell Labs., Murray Hill, NJ, USA
  • Volume
    19
  • Issue
    11
  • fYear
    1983
  • fDate
    11/1/1983 12:00:00 AM
  • Firstpage
    1625
  • Lastpage
    1627
  • Abstract
    A simple differentiable expression is derived which yields the quasi-Fermi level as a function of the carrier concentration in various narrow-bandgap semiconductor devices, such as PbSnSe lasers, under both nondegenerate and moderately degenerate (lasing) conditions.
  • Keywords
    Lead materials/devices; Semiconductor lasers; Charge carrier density; Density measurement; Energy measurement; Integrated optics; Laser modes; Optical losses; Performance analysis; Photonic band gap; Semiconductor devices; Semiconductor lasers;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.1983.1071770
  • Filename
    1071770
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1095402