Title :
IVB-4 probing the minority-carrier quasi-Fermi level in epitaxial Schottky-barrier diodes
Author :
Chuang, C.T. ; Wagner, L.F.
fDate :
12/1/1984 12:00:00 AM
Keywords :
Degradation; Electrons; MOSFET circuits; Particle scattering; Quantization; Quantum computing; Quantum mechanics; Schottky diodes; Temperature; Very large scale integration;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1984.21864
