DocumentCode
1095417
Title
Avalanche semiconductor radiation detectors
Author
Sadygov, Z.Y. ; Zheleznykh, I.M. ; Malakhov, N.A. ; Jejer, V.N. ; Kirillova, T.A.
Author_Institution
JINR, Dubna, Russia
Volume
43
Issue
3
fYear
1996
fDate
6/1/1996 12:00:00 AM
Firstpage
1009
Lastpage
1013
Abstract
Operation of novel avalanche semiconductor detectors, produced on the basis of heterojunctions Si-SiC and Si-SixOy, is described. A uniform avalanche process with gain from 103 to 105 can be reached depending on the conductivity of the SiC and SixOy layers. Two types of avalanche photodetectors designed for applications in the wavelength range 500-1000 mm with quantum efficiency 60±10% (650 nm) and 200-700 nm with quantum efficiency 60±15% (450 nm) are presented
Keywords
avalanche photodiodes; photodetectors; silicon radiation detectors; 200 to 700 nm; 500 to 1000 nm; 60 percent; Si-SiC; Si-SiO; avalanche semiconductor radiation detectors; conductivity; gain; heterojunctions; photodetectors; quantum efficiency; Avalanche breakdown; Breakdown voltage; Conductivity; Electrodes; Fluctuations; Radiation detectors; Semiconductor radiation detectors; Sensor arrays; Silicon carbide; Substrates;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/23.510748
Filename
510748
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