• DocumentCode
    1095438
  • Title

    IVB-2 evidence of quantum mechanical behavior for MOSFET inversion carriers at room temperature

  • Author

    Mou-Shiung Lin

  • Volume
    31
  • Issue
    12
  • fYear
    1984
  • fDate
    12/1/1984 12:00:00 AM
  • Firstpage
    1976
  • Lastpage
    1976
  • Keywords
    Degradation; Electron devices; Electron mobility; MOSFET circuits; Particle scattering; Quantization; Quantum computing; Quantum mechanics; Temperature; Very large scale integration;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1984.21866
  • Filename
    1484151
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1095438