Title :
IVB-2 evidence of quantum mechanical behavior for MOSFET inversion carriers at room temperature
fDate :
12/1/1984 12:00:00 AM
Keywords :
Degradation; Electron devices; Electron mobility; MOSFET circuits; Particle scattering; Quantization; Quantum computing; Quantum mechanics; Temperature; Very large scale integration;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1984.21866
