DocumentCode
1095456
Title
IVB-6 impact ionization coefficients in 〈100〉 and 〈111〉 silicon
Author
Robbins, V.M. ; Wang, Tao ; Tang, Ju ; Hess, K. ; Stillman, G.E. ; McIntyre, R.J. ; Webb, P.
Volume
31
Issue
12
fYear
1984
fDate
12/1/1984 12:00:00 AM
Firstpage
1977
Lastpage
1978
Keywords
Charge carrier processes; Circuits; Gold; Impact ionization; Large scale integration; Schottky barriers; Schottky diodes; Silicides; Silicon; Very large scale integration;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1984.21868
Filename
1484153
Link To Document