Title :
IVB-7 an impact ionization model for 2D device simulation
Author :
Chan, N. ; Thurgate, T.
fDate :
12/1/1984 12:00:00 AM
Keywords :
CMOS process; Degradation; Electrons; Heterojunction bipolar transistors; Impact ionization; Indium tin oxide; MOS devices; Semiconductor device modeling; Solid state circuits; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1984.21869
