VA-2 GaAs/(Ga,Al)As heterojunction bipolar transistors with buried oxygen-implanted isolation layers

Author

Asbeck, P.M. ; Miller, Douglas L. ; Anderson, R.J. ; Eisen, F.H.

Volume

Issue

fYear

1984

fDate

12/1/1984 12:00:00 AM

Firstpage

1979

Lastpage

1979

Keywords

Gallium arsenide; Heterojunction bipolar transistors; Photonic band gap;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

DOI

10.1109/T-ED.1984.21871

Filename

1484156

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