• DocumentCode
    1095511
  • Title

    VA-4 radiative recombination in heterojunction bipolar transistors

  • Author

    Hayes, J.R. ; Leheny, R.F. ; Temkin, H. ; Gossard, Arthur C. ; Wiegmann, W.

  • Volume
    31
  • Issue
    12
  • fYear
    1984
  • fDate
    12/1/1984 12:00:00 AM
  • Firstpage
    1979
  • Lastpage
    1980
  • Keywords
    Bipolar transistors; Gallium arsenide; Heterojunction bipolar transistors; Implants; Indium gallium arsenide; Indium phosphide; Logic; Microwave transistors; Photonic band gap; Radiative recombination;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1984.21872
  • Filename
    1484157
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1095511