DocumentCode
1095515
Title
VA-3 emitter-base bandgap grading effects on GaAlAs/GaAs heterojunction bipolar transistors
Author
Yoshida, J. ; Kurata, M. ; Obara, M. ; Morizuka, K. ; Hojo, A.
Volume
31
Issue
12
fYear
1984
fDate
12/1/1984 12:00:00 AM
Firstpage
1979
Lastpage
1979
Keywords
Bipolar transistors; Charge carrier lifetime; Cutoff frequency; Energy states; Gallium arsenide; Heterojunction bipolar transistors; Ion implantation; Photonic band gap; Research and development; Testing;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1984.21873
Filename
1484158
Link To Document