• DocumentCode
    1095570
  • Title

    Self-electro-optic effect device using Wannier-Stark localisation in an unstrained InGaAs/InAlAs superlattice grown on GaAs substrate

  • Author

    Tominaga, Kazuhiro ; Hosoda, M. ; Watanabe, Toshio

  • Author_Institution
    ATR Opt. & Radio Commun. Res. Labs., Kyoto
  • Volume
    30
  • Issue
    10
  • fYear
    1994
  • fDate
    5/12/1994 12:00:00 AM
  • Firstpage
    782
  • Lastpage
    784
  • Abstract
    The authors report the first clear observation of Wannier-Stark localisation in an unstrained In0.15Ga0.85As/In 0.15Al0.85As superlattice on a strain-relaxed InGaAs buffer layer grown on GaAs substrate. Optical bistability is demonstrated for a resistor-SEED (self-electro-optic effect device) and a symmetric SEED system at an operating wavelength of 877 nm
  • Keywords
    III-V semiconductors; SEEDs; gallium arsenide; indium compounds; integrated optics; semiconductor superlattices; 877 nm; GaAs; GaAs substrate; In0.15Ga0.85As/In0.15Al0.85 As; InGaAs; InGaAs-InAlAs; InGaAs/InAlAs superlattice; Wannier-Stark localisation; operating wavelength; optical bistability; resistor-SEED; self-electro-optic effect device; semiconductor growth; strain-relaxed InGaAs buffer layer; symmetric SEED system; unstrained;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19940522
  • Filename
    289225
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1095570