DocumentCode :
1095570
Title :
Self-electro-optic effect device using Wannier-Stark localisation in an unstrained InGaAs/InAlAs superlattice grown on GaAs substrate
Author :
Tominaga, Kazuhiro ; Hosoda, M. ; Watanabe, Toshio
Author_Institution :
ATR Opt. & Radio Commun. Res. Labs., Kyoto
Volume :
30
Issue :
10
fYear :
1994
fDate :
5/12/1994 12:00:00 AM
Firstpage :
782
Lastpage :
784
Abstract :
The authors report the first clear observation of Wannier-Stark localisation in an unstrained In0.15Ga0.85As/In 0.15Al0.85As superlattice on a strain-relaxed InGaAs buffer layer grown on GaAs substrate. Optical bistability is demonstrated for a resistor-SEED (self-electro-optic effect device) and a symmetric SEED system at an operating wavelength of 877 nm
Keywords :
III-V semiconductors; SEEDs; gallium arsenide; indium compounds; integrated optics; semiconductor superlattices; 877 nm; GaAs; GaAs substrate; In0.15Ga0.85As/In0.15Al0.85 As; InGaAs; InGaAs-InAlAs; InGaAs/InAlAs superlattice; Wannier-Stark localisation; operating wavelength; optical bistability; resistor-SEED; self-electro-optic effect device; semiconductor growth; strain-relaxed InGaAs buffer layer; symmetric SEED system; unstrained;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19940522
Filename :
289225
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1095570
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