DocumentCode

1095571

Title

VB-2 hydrogenation by ion implantation for VLSI/SOI applications

Author

Singh, Harinder J. ; Saraswat, Krishna C. ; Meindl, J.D.

Volume

31

Issue

12

fYear

1984

fDate

12/1/1984 12:00:00 AM

Firstpage

1981

Lastpage

1982

Keywords

Annealing; Doping; Hydrogen; Ion implantation; Leakage current; MOS devices; Predictive models; Resistors; Silicon; Very large scale integration;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1984.21877

Filename

1484162