Title :
VB-2 hydrogenation by ion implantation for VLSI/SOI applications
Author :
Singh, Harinder J. ; Saraswat, Krishna C. ; Meindl, J.D.
fDate :
12/1/1984 12:00:00 AM
Keywords :
Annealing; Doping; Hydrogen; Ion implantation; Leakage current; MOS devices; Predictive models; Resistors; Silicon; Very large scale integration;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1984.21877
