DocumentCode
1095594
Title
10 wavelength MQW-DBR lasers fabricated by selective MOVPE growth
Author
Sasaki, T. ; Yamaguchi, Masaki ; Kitamura, Masayuki
Author_Institution
Opto-Electron. Res. Labs., NEC Corp., Ibaraki
Volume
30
Issue
10
fYear
1994
fDate
5/12/1994 12:00:00 AM
Firstpage
785
Lastpage
786
Abstract
Selective MOVPE growth is used to develop multiwavelength MQW-DBR lasers. Selectively grown waveguide layer thicknesses in the DBR region are varied by controlling the mask stripe width, resulting in wavelength control in MQW-DBR laser arrays fabricated with a constant period grating. A wavelength span of over 20 nm at a 2.5 nm constant wavelength step is demonstrated for 10 consecutive lasers
Keywords
diffraction gratings; semiconductor growth; semiconductor laser arrays; vapour phase epitaxial growth; 10 wavelength MQW-DBR lasers; MQW-DBR laser arrays; constant period grating; constant wavelength step; mask stripe width; multiwavelength MQW-DBR lasers; selective MOVPE growth; selectively grown; waveguide layer thicknesses; wavelength control; wavelength span;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19940519
Filename
289227
Link To Document