DocumentCode

1095599

Title

VB-4 effects of Si3N4and Al films on the passivation of poly-Si films

Author

Rodder, M. ; Madan, S. ; Antoniadis, D. ; Kikkawa, Takamaro

Volume

31

Issue

12

fYear

1984

fDate

12/1/1984 12:00:00 AM

Firstpage

1982

Lastpage

1983

Keywords

Annealing; Dielectric devices; Doping; Grain boundaries; Hydrogen; Implants; MOSFETs; Passivation; Plasma temperature; Silicon;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1984.21880

Filename

1484165