Title :
VIA-2 electron velocity-field characteristics of GaAs and In0.53Ga0.47As below the Gunn effect threshold
Author :
Haase, M.A. ; Tabatabaie, N. ; Robbins, V.M. ; Stillman, G.E.
fDate :
12/1/1984 12:00:00 AM
Keywords :
Electrons; Frequency; Gallium arsenide; Gunn devices; Laboratories; Optical scattering; Oscillators; Power generation; Temperature; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1984.21885
