Title :
Vertical-cavity surface-emitting lasers with periodic gain and aluminium top contacts
Author :
Yoffe, Gideon W. ; van der Vleuten, W.C. ; Leys, M.R. ; Karouta, F. ; Wolter, J.H.
Author_Institution :
COBRA Interuniv. Res. Inst. on Commun. Technol., Eindhoven Univ. of Technol.
fDate :
5/12/1994 12:00:00 AM
Abstract :
The authors report low threshold current operation of InGaAs/AlGaAs vertical-cavity surface-emitting lasers. A periodic gain structure allows more strained wells to be used than in conventional multiquantum-well devices, offering advantages for high-power devices. Aluminium ohmic contacts grown by molecular beam epitaxy are used on lasers for the first time
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser cavity resonators; ohmic contacts; semiconductor lasers; Al ohmic contacts; Al top contacts; InGaAs-AlGaAs; InGaAs/AlGaAs; high-power devices; low threshold current operation; molecular beam epitaxy; periodic gain; periodic gain structure; strained wells; vertical-cavity surface-emitting lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940549
