Title :
VIA-4 Negative differential resistance in quantum-state transfer superlattice diodes
Author :
Kirchoefer, S.W. ; Magno, R. ; Comas, J.
fDate :
12/1/1984 12:00:00 AM
Keywords :
Diodes; Electrons; Etching; FETs; Gallium arsenide; Gunn devices; Indium gallium arsenide; MESFETs; Silicon; Superlattices;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1984.21887
