DocumentCode

1095732

Title

VIB-5 submicrometer-gate self-aligned GaAs FET with p-type barrier layer fabricated by ion implantation

Author

Matsumoto, Kaname ; Hashizume, Nobuya ; Atoda, N.

Volume

31

Issue

12

fYear

1984

fDate

12/1/1984 12:00:00 AM

Firstpage

1987

Lastpage

1987

Keywords

Annealing; FETs; Fabrication; Furnaces; Gallium arsenide; Ion implantation; Lamps; MESFET circuits; Threshold voltage; Tungsten;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1984.21893

Filename

1484178