Title :
VIB-5 submicrometer-gate self-aligned GaAs FET with p-type barrier layer fabricated by ion implantation
Author :
Matsumoto, Kaname ; Hashizume, Nobuya ; Atoda, N.
fDate :
12/1/1984 12:00:00 AM
Keywords :
Annealing; FETs; Fabrication; Furnaces; Gallium arsenide; Ion implantation; Lamps; MESFET circuits; Threshold voltage; Tungsten;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1984.21893
