DocumentCode
1095746
Title
VIB-8 GaAs MESFET´s and AlGaAs double-heterostructure diode lasers fabricated on monolithic GaAs/Si substrates
Author
Choi, H.K. ; Metze, George M. ; Turner, G.W. ; Fan, J.C.C.
Volume
31
Issue
12
fYear
1984
fDate
12/1/1984 12:00:00 AM
Firstpage
1988
Lastpage
1988
Keywords
Buffer layers; Diode lasers; Force measurement; Gallium arsenide; Integrated circuit technology; Laboratories; MESFETs; Molecular beam epitaxial growth; Optical device fabrication; Substrates;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1984.21895
Filename
1484180
Link To Document