Title :
VIB-8 GaAs MESFET´s and AlGaAs double-heterostructure diode lasers fabricated on monolithic GaAs/Si substrates
Author :
Choi, H.K. ; Metze, George M. ; Turner, G.W. ; Fan, J.C.C.
fDate :
12/1/1984 12:00:00 AM
Keywords :
Buffer layers; Diode lasers; Force measurement; Gallium arsenide; Integrated circuit technology; Laboratories; MESFETs; Molecular beam epitaxial growth; Optical device fabrication; Substrates;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1984.21895
