Title :
Unstrained In0.3Ga0.7As/In0.29Al 0.71As resonant tunnelling diodes grown on GaAs
Author :
Lin, Ray-Ming ; Chyi, Jen-Inn ; Tu, S.L. ; Peng, C.K. ; Yang, Shanchieh Jay
fDate :
5/12/1994 12:00:00 AM
Abstract :
The authors investigate the current-voltage characteristics of In 0.3Ga0.7As/In0.29Al0.71As double-barrier resonant tunnelling diodes grown on GaAs substrates. These devices exhibit peak-to-valley current ratios as high as 7.6 and 19.5 at room temperature and 77 K, respectively. Two negative differential resistance regions are also observed for devices with larger well width. These results have shown that a high quality epilayer can be obtained despite the large lattice mismatch between In0.3 Ga0.7As and GaAs
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; negative resistance; resonant tunnelling devices; tunnel diodes; GaAs; GaAs substrates; GaAs-In0.3Ga0.7As-In0.29Al0.71As; current-voltage characteristics; double-barrier RTD; negative differential resistance regions; resonant tunnelling diodes;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940435
