• DocumentCode
    1095753
  • Title

    Unstrained In0.3Ga0.7As/In0.29Al 0.71As resonant tunnelling diodes grown on GaAs

  • Author

    Lin, Ray-Ming ; Chyi, Jen-Inn ; Tu, S.L. ; Peng, C.K. ; Yang, Shanchieh Jay

  • Volume
    30
  • Issue
    10
  • fYear
    1994
  • fDate
    5/12/1994 12:00:00 AM
  • Firstpage
    826
  • Lastpage
    828
  • Abstract
    The authors investigate the current-voltage characteristics of In 0.3Ga0.7As/In0.29Al0.71As double-barrier resonant tunnelling diodes grown on GaAs substrates. These devices exhibit peak-to-valley current ratios as high as 7.6 and 19.5 at room temperature and 77 K, respectively. Two negative differential resistance regions are also observed for devices with larger well width. These results have shown that a high quality epilayer can be obtained despite the large lattice mismatch between In0.3 Ga0.7As and GaAs
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; negative resistance; resonant tunnelling devices; tunnel diodes; GaAs; GaAs substrates; GaAs-In0.3Ga0.7As-In0.29Al0.71As; current-voltage characteristics; double-barrier RTD; negative differential resistance regions; resonant tunnelling diodes;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19940435
  • Filename
    289244
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1095753