Title :
Insight into criteria for design optimisation of bistable field effect transistor (BISFET)
Author :
Ojha, J.J. ; Simmons, Jay G. ; Mand, R.S. ; SpringThorpe, A.J.
Author_Institution :
Dept. of Eng. Phys., McMaster Univ., Hamilton, Ont.
fDate :
5/12/1994 12:00:00 AM
Abstract :
The operation of the novel n-channel GaAs/AlGaAs bistable field effect transistor (BISFET) with a separate collector terminal is reported for the first time. The hysteresis in the previously reported source-loop transitions is found to increase from 0.5 V to 1 V with a negative collector bias, and the switching ratio increases from 1.5 to nearly 2. This suggests important criteria for design optimisation which dramatically enhance the potential of the BISFET for practical applications
Keywords :
III-V semiconductors; aluminium compounds; field effect transistors; gallium arsenide; semiconductor switches; 1 V; BISFET; GaAs-AlGaAs; bistable field effect transistor; collector terminal; design optimisation; hysteresis; n-channel GaAs/AlGaAs transistor; negative collector bias; source-loop transitions; switching ratio;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940441
