Title :
Electrical properties and thermal stability of MBE-grown Al/AlxGa1-xAs/Al0.25Ga0.75As Schottky barriers
Author :
Bosacchi, A. ; Franchi, S. ; Gombia, E. ; Mosca, R. ; Fantini, F. ; Menozzi, R.
Author_Institution :
Istituto MASPEC, CNR, Parma
fDate :
5/12/1994 12:00:00 AM
Abstract :
The effects of the Al mole fraction of a thin (4 nm) AlxGa1-xAs cap on the barrier height and the thermal stability of Al/AlxGa1-xAs/Al0.25 Ga0.75As Schottky barriers prepared in situ by MBE have been investigated. The behaviour of the barrier heights and the ideality factors of diodes after annealing up to 435°C are studied
Keywords :
III-V semiconductors; Schottky-barrier diodes; aluminium; aluminium compounds; annealing; gallium arsenide; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; 435 degC; Al mole fraction; Al-AlGaAs; Al/AlxGa1-xAs/Al0.25Ga0.75 As Schottky barriers; MBE; Schottky barrier diodes; annealing; barrier height; ideality factors; thermal stability;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940533
