• DocumentCode
    1095794
  • Title

    Electrical properties and thermal stability of MBE-grown Al/AlxGa1-xAs/Al0.25Ga0.75As Schottky barriers

  • Author

    Bosacchi, A. ; Franchi, S. ; Gombia, E. ; Mosca, R. ; Fantini, F. ; Menozzi, R.

  • Author_Institution
    Istituto MASPEC, CNR, Parma
  • Volume
    30
  • Issue
    10
  • fYear
    1994
  • fDate
    5/12/1994 12:00:00 AM
  • Firstpage
    820
  • Lastpage
    822
  • Abstract
    The effects of the Al mole fraction of a thin (4 nm) AlxGa1-xAs cap on the barrier height and the thermal stability of Al/AlxGa1-xAs/Al0.25 Ga0.75As Schottky barriers prepared in situ by MBE have been investigated. The behaviour of the barrier heights and the ideality factors of diodes after annealing up to 435°C are studied
  • Keywords
    III-V semiconductors; Schottky-barrier diodes; aluminium; aluminium compounds; annealing; gallium arsenide; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; 435 degC; Al mole fraction; Al-AlGaAs; Al/AlxGa1-xAs/Al0.25Ga0.75 As Schottky barriers; MBE; Schottky barrier diodes; annealing; barrier height; ideality factors; thermal stability;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19940533
  • Filename
    289248
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1095794