• DocumentCode
    1095810
  • Title

    Anisotropic electron cyclotron resonance etching of GaInP/AlGaInP heterostructures

  • Author

    Shul, R.J. ; Schneider, R.P. ; Constantine, C.

  • Author_Institution
    Sandia Nat. Labs., Albuquerque, NM
  • Volume
    30
  • Issue
    10
  • fYear
    1994
  • fDate
    5/12/1994 12:00:00 AM
  • Firstpage
    817
  • Lastpage
    819
  • Abstract
    Anisotropic dry etching of GaInP/AlGaInP heterostructures has been achieved for the first time in a high-ion-density electron cyclotron resonance (ECR)-generated plasma. Structures consisting of AlInP/(GaInP/AlGaInP)/AlInP and AlGaAs/(GaInP/AlGaInP)/AlGaAs heterostructures have been etched in a CH4/H2/Cl 2/BCl3/Ar plasma with smooth sidewalls and surface morphologies
  • Keywords
    III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; semiconductor junctions; sputter etching; surface structure; CH4/H2/Cl2/BCl3/Ar plasma; GaInP-AlGaInP; GaInP/AlGaInP heterostructures; H2-Cl2-BCl3-Ar; anisotropic dry etching; electron cyclotron resonance etching; high-ion-density ECR-generated plasma; smooth morphologies; smooth sidewalls;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19940550
  • Filename
    289250
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1095810