Title :
Advanced Circuit-Level Model for Temperature-Sensitive Read/Write Operation of a Magnetic Tunnel Junction
Author :
Hyein Lim ; Seungjun Lee ; Hyungsoon Shin
Author_Institution :
Dept. of Electron. Eng., Ewha Womans Univ., Seoul, South Korea
Abstract :
A circuit-level model of a magnetic tunnel junction (MTJ) that accurately depicts the spin-transfer torque switching behavior of an MTJ along with its voltage/temperature dependency is presented. The unified switching model that was suggested in our previous work is suitable for the circuit-level model because the model seamlessly covers the entire current pulsewidth region. Based on this switching behavior model, a method of dynamic current monitoring is proposed for an advanced circuit-level model. The voltage/temperature characteristics of an MTJ are also integrated for a more accurate circuit-level simulation. The proposed model corresponds well with the experimental data for switching characteristics at different temperatures. The design margin in the read/write circuits with an MTJ is analyzed to demonstrate the effectiveness of the model.
Keywords :
MRAM devices; circuit simulation; magnetoelectronics; MRAM; MTJ; advanced circuit-level model; circuit-level simulation; current pulsewidth region; dynamic current monitoring; magnetic tunnel junction; magnetoresistive random access memory; spin-transfer torque switching behavior; switching behavior model; temperature-sensitive read-write operation; unified switching model; voltage-temperature dependency; Analytical models; Integrated circuit modeling; Mathematical model; Switches; Temperature; Temperature dependence; Tunneling magnetoresistance; Magnetic tunnel junction (MTJ); magnetoresistive random access memory (MRAM); spin-transfer torque (STT); tunneling magnetoresistance (TMR); tunneling magnetoresistance (TMR).;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2014.2380819
