Title :
380 ps, 9.5 mW Josephson 4 Kbit RAM
Author :
Nagasawa, S. ; Hashimoto, Yo ; Numata, Hidetoshi ; Tsuchida, Satoshi ; Tahara, S.
Author_Institution :
Fundamental Res. Labs., NEC Corp., Tsukuba
fDate :
5/12/1994 12:00:00 AM
Abstract :
The authors have developed a Josephson 4 Kbit RAM with vortex transitional memory cells and resistor coupled drivers. The RAM is fabricated by 1.5 μm Nb technology with approximately 21000 Nb/AlO x/Nb Josephson junctions. 380 ps access time, 98.6% bit yield, and 9.5 mW power dissipation have been experimentally obtained in the 4 Kbit RAM chip
Keywords :
aluminium compounds; niobium; random-access storage; superconducting memory circuits; 1.5 μm Nb technology; 380 ps; 4 kbit; 9.5 mW; Josephson 4 Kbit RAM; Nb-AlO-Nb; Nb/AlOx/Nb Josephson junctions; RAM chip; access time; power dissipation; resistor coupled drivers; vortex transitional memory cells;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940535
