Title :
300 ps 4 K read-only memory implemented with AlGaAs/GaAs HBT technology
Author :
Kwok, C.Y. ; Sheng, N.H. ; Asbeck, P.M.
Author_Institution :
California Univ., San Diego, La Jolla, CA
fDate :
5/12/1994 12:00:00 AM
Abstract :
A low-power mask-programmable 4 Kbit read-only memory with 300 ps access time is reported. The circuit is implemented in AlGaAs/GaAs HBT technology based on 1.4 μm emitter width. Power dissipation for the circuit is less than 1.2 W, which has been minimised through the use of capacitively-coupled active pull-down circuitry
Keywords :
III-V semiconductors; PROM; aluminium compounds; bipolar integrated circuits; emitter-coupled logic; gallium arsenide; integrated memory circuits; 1.2 W; 1.4 mum; 300 ps; 4 K read-only memory; 4 kbit; AlGaAs-GaAs; AlGaAs/GaAs HBT technology; access time; capacitively-coupled active pull-down circuitry; circuit power dissipation; current mode logic; emitter width; low-power; mask-programmable;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940532
