Recrystallization of Si films on thermal SiO2-coated Si substrates using a high-speed e-beam line source

Lateral zone melting from a fast-scanning (5-30-cm/s) e-beam line source has been used to grow single-crystal films with an area limited only by the e-beam scan field. Electron backscattering contrast and etch pit techniques have been used to study the crystallographic orientation and the extent of single-crystal silicon film growth on thermal SiO2-coated silicon (SOI) wafers.