• DocumentCode
    1095966
  • Title

    A numerical analysis of a short vertical n+-n--n+GaAs MESFET

  • Author

    Lyden, C. ; Campbell, J.S.

  • Author_Institution
    University College, Cork, Ireland
  • Volume
    5
  • Issue
    2
  • fYear
    1984
  • fDate
    2/1/1984 12:00:00 AM
  • Firstpage
    43
  • Lastpage
    44
  • Abstract
    A half-micrometer channel-length n+-n--n+GaAs MESFET is simulated numerically using a drift-diffusion description of electronic transport. Recently published experimental results [3], [4] show high pinchoff voltage and high transconductance. The computer simulations ascribe these values to injections of carriers into the channel.
  • Keywords
    Electrons; Fingers; Finite element methods; Gallium arsenide; MESFETs; Numerical analysis; Numerical simulation; Steady-state; Transconductance; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1984.25826
  • Filename
    1484202
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1095966