Title :
A numerical analysis of a short vertical n+-n--n+GaAs MESFET
Author :
Lyden, C. ; Campbell, J.S.
Author_Institution :
University College, Cork, Ireland
fDate :
2/1/1984 12:00:00 AM
Abstract :
A half-micrometer channel-length n+-n--n+GaAs MESFET is simulated numerically using a drift-diffusion description of electronic transport. Recently published experimental results [3], [4] show high pinchoff voltage and high transconductance. The computer simulations ascribe these values to injections of carriers into the channel.
Keywords :
Electrons; Fingers; Finite element methods; Gallium arsenide; MESFETs; Numerical analysis; Numerical simulation; Steady-state; Transconductance; Voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1984.25826
