Pill-box capless thermal-heat-pulse annealing of ion-implanted GaAs

A capless annealing method for GaAs, employing short (1-10-s) thermal heat pulses from a graphite strip heater, is described. Results with²⁹Si+ implanted into semi-insulating chromium-doped HB and chromium-doped LEC GaAs are presented. The samples were annealed at temperatures as high as 1000°C in a stationary N2atmosphere with the implanted surface in close contact with a flat graphite strip heater surface. The wafers were covered with a graphite lid, effectively confining the volatile arsenic to a very small volume around the sample and providing a uniform temperature environment. Implantation efficiencies were high, and the quality of the implanted surface remained excellent after annealing.