Title :
Radiation tolerance of NMOS technology on indium phosphide
Author :
Lile, D.L. ; Taylor, M.J. ; Messick, L.J. ; Zeisse, C.R. ; Collins, D.A.
Author_Institution :
Naval Ocean Systems, San Diego, CA
fDate :
3/1/1984 12:00:00 AM
Abstract :
Preliminary unbiased total-dose gamma irradiation results on InP MIS structures are reported. Using discrete FET and MIS diode samples as well as CCD and ring-oscillator (RO) integrated circuits, it is concluded that, under the present test conditions, no changes in the performance of these devices can be attributed to the gamma flux to doses as high as 108rad.
Keywords :
Charge coupled devices; Circuit testing; Diodes; FET integrated circuits; Indium phosphide; Insulation; Integrated circuit technology; Integrated circuit testing; MIS devices; MOS devices;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1984.25843
