• DocumentCode
    1096146
  • Title

    Radiation tolerance of NMOS technology on indium phosphide

  • Author

    Lile, D.L. ; Taylor, M.J. ; Messick, L.J. ; Zeisse, C.R. ; Collins, D.A.

  • Author_Institution
    Naval Ocean Systems, San Diego, CA
  • Volume
    5
  • Issue
    3
  • fYear
    1984
  • fDate
    3/1/1984 12:00:00 AM
  • Firstpage
    94
  • Lastpage
    96
  • Abstract
    Preliminary unbiased total-dose gamma irradiation results on InP MIS structures are reported. Using discrete FET and MIS diode samples as well as CCD and ring-oscillator (RO) integrated circuits, it is concluded that, under the present test conditions, no changes in the performance of these devices can be attributed to the gamma flux to doses as high as 108rad.
  • Keywords
    Charge coupled devices; Circuit testing; Diodes; FET integrated circuits; Indium phosphide; Insulation; Integrated circuit technology; Integrated circuit testing; MIS devices; MOS devices;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1984.25843
  • Filename
    1484219
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1096146