• DocumentCode
    1096169
  • Title

    GaAs IMPATT diodes for 60 GHz

  • Author

    Adlerstein, M.G. ; Chu, S.L.G.

  • Author_Institution
    Raytheon Research Division, Lexington, MA
  • Volume
    5
  • Issue
    3
  • fYear
    1984
  • fDate
    3/1/1984 12:00:00 AM
  • Firstpage
    97
  • Lastpage
    98
  • Abstract
    High-performance GaAs double-drift Read IMPATT diodes have been demonstrated at 60 GHz. 1.24-W CW output power at 11.4-percent dc to RF conversion efficiency was obtained with a junction temperature rise of 225°C. The doping profiles and test circuits have not yet been optimized and we expect that still higher power and efficiency should be achievable.
  • Keywords
    Admittance; Circuit testing; Diodes; Doping profiles; Gallium arsenide; Molecular beam epitaxial growth; Radio frequency; Silicon; Temperature; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1984.25844
  • Filename
    1484220
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1096169