• DocumentCode
    1096250
  • Title

    Charge-packet-initiated switching of metal—tunnel-oxide—silicon (MTOS) junctions

  • Author

    Fossum, E.R. ; Barker, R.C.

  • Author_Institution
    Yale University, New Haven, CT
  • Volume
    5
  • Issue
    4
  • fYear
    1984
  • fDate
    4/1/1984 12:00:00 AM
  • Firstpage
    112
  • Lastpage
    114
  • Abstract
    We report the switching of a bistable metal-tunnel-oxide-silicon (MTOS) junction from a low-current state to a high-current state by the insertion of a charge packet of minority carriers from a charge-coupled device input structure. For the 33-Å tunnel oxide reported in this letter, a switching threshold of 630 pC for a 40 mils2device area was observed. The transient switching time is approximately 10-100 ms, depending upon the size of the injected charge packet.
  • Keywords
    Annealing; Current-voltage characteristics; Electrodes; Helium; Packet switching; Radiative recombination; Spontaneous emission; Substrates; Tunneling; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1984.25851
  • Filename
    1484227
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1096250