• DocumentCode
    1096298
  • Title

    Ion implantation of Boron in GaAs MESFET´s

  • Author

    McNally, P.J.

  • Author_Institution
    COMSAT Laboratories, Clarksburg, MD
  • Volume
    5
  • Issue
    4
  • fYear
    1984
  • fDate
    4/1/1984 12:00:00 AM
  • Firstpage
    126
  • Lastpage
    128
  • Abstract
    The quality of the GaAs substrate plays a major role in MESFET performance for devices fabricated by direct ion implantation of silicon atoms into liquid-encapsulated Czochralski (LEC) material. High-energy (270-keV)11B+ implantation was used to improve the silicon impurity distribution near the substrate interface, reduce substrate effects, and produce a more abrupt interface. Since current conduction under low-noise MESFET operation occurs in this region of the channel, microwave performance is improved significantly.
  • Keywords
    Annealing; Boron; FETs; Fabrication; Gallium arsenide; Implants; Ion implantation; MESFETs; Noise figure; Plasma measurements;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1984.25856
  • Filename
    1484232
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1096298