DocumentCode :
1096347
Title :
Controlled diode profiling for GaAs strip-coupled correlators
Author :
Melloch, M.R. ; Wagers, R.S.
Author_Institution :
Texas Instruments Incorporated, Dallas, TX
Volume :
5
Issue :
5
fYear :
1984
fDate :
5/1/1984 12:00:00 AM
Firstpage :
136
Lastpage :
138
Abstract :
Surface acoustic wave (SAW) memory correlators employ the varactor properties of Schottky diodes arrayed along the acoustic path. Described, and illustrated, here is a tailoring of the implant which defines the Schottky diode region of the strip-coupled GaAs surface acoustic wave memory correlator. The new implant schedule has resulted in improvements in correlation efficiencies in the range of 10-15 dBm for these devices compared to previously reported strip-coupled GaAs memory correlators.
Keywords :
Acoustic arrays; Acoustic devices; Acoustic waves; Correlators; Gallium arsenide; Implants; Schottky diodes; Surface acoustic wave devices; Surface acoustic waves; Varactors;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/EDL.1984.25861
Filename :
1484237
Link To Document :
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