• DocumentCode
    1096478
  • Title

    A multiwafer plasma system for anodic nitridation and oxidation

  • Author

    Wong, S.S. ; Oldham, W.G.

  • Author_Institution
    Hewlett-Packard Laboratories, Palo Alto, CA
  • Volume
    5
  • Issue
    5
  • fYear
    1984
  • fDate
    5/1/1984 12:00:00 AM
  • Firstpage
    175
  • Lastpage
    177
  • Abstract
    An experimental, high throughput and clean multiwafer system for plasma anodization is described. The applications of this system towards growing anodic silicon nitride and anodic silicon dioxide films, as well as the anodic nitridation of SiO2films are demonstrated. Pure nitride films thicker than 15 nm may be produced at 950°C. Oxide films are grown at temperature as low as 600°C. SiO2films can be converted to a high percentage of nitride by anodic treatment.
  • Keywords
    Boats; Furnaces; Optical films; Oxidation; Plasma applications; Plasma density; Plasma temperature; Radio frequency; Semiconductor films; Silicon compounds;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1984.25874
  • Filename
    1484250
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1096478