Title :
Low-frequency diffusion noise in GaAs MESFET´s
Author :
Duh, K.H. ; Zhu, X.C. ; van der Ziel, A.
Author_Institution :
University of Minnesota, Minneapolis, MN
fDate :
6/1/1984 12:00:00 AM
Abstract :
We report here on low-frequency diffusion noise of GaAS MESFET´s. The Poole-Frenkel effect gives a shift of the corner frequency (f = D/πL2). From the measurements the activation energy of the diffusing ions is found to be 0.16 eV. At 77 K the diffusion noise is frozen out and the device has a 1/f spectrum.
Keywords :
Density estimation robust algorithm; Diffusion processes; Frequency; Gallium arsenide; Low-frequency noise; MESFETs; Noise generators; Noise measurement; Permittivity; Voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1984.25887
