Title :
GaAs MESFET´s fabricated on monolithic GaAs/Si substrates
Author :
Choi, H.K. ; Tsaur, B-Y. ; Metze, G.M. ; Turner, G.W. ; Fan, And J C C
Author_Institution :
Massachusetts Institute of Technology, Lexington, MA
fDate :
6/1/1984 12:00:00 AM
Abstract :
GaAs MESFET´s have been fabricated for the first time on monolithic GaAs/Si substrates. The substrates were prepared by growing single-crystal GaAs layers on Si wafers that had been coated with a Ge layer deposited by e-beam evaporation. The MESFET´s exhibit good transistor characteristics, with maximum transconductance of 105 mS/mm for a gate length of 2.1 µm.
Keywords :
Chemical vapor deposition; Fabrication; Gallium arsenide; Lattices; Light emitting diodes; MESFETs; Monolithic integrated circuits; Photovoltaic cells; Transconductance; Wet etching;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1984.25889
