• DocumentCode
    1096634
  • Title

    GaAs MESFET´s fabricated on monolithic GaAs/Si substrates

  • Author

    Choi, H.K. ; Tsaur, B-Y. ; Metze, G.M. ; Turner, G.W. ; Fan, And J C C

  • Author_Institution
    Massachusetts Institute of Technology, Lexington, MA
  • Volume
    5
  • Issue
    6
  • fYear
    1984
  • fDate
    6/1/1984 12:00:00 AM
  • Firstpage
    207
  • Lastpage
    208
  • Abstract
    GaAs MESFET´s have been fabricated for the first time on monolithic GaAs/Si substrates. The substrates were prepared by growing single-crystal GaAs layers on Si wafers that had been coated with a Ge layer deposited by e-beam evaporation. The MESFET´s exhibit good transistor characteristics, with maximum transconductance of 105 mS/mm for a gate length of 2.1 µm.
  • Keywords
    Chemical vapor deposition; Fabrication; Gallium arsenide; Lattices; Light emitting diodes; MESFETs; Monolithic integrated circuits; Photovoltaic cells; Transconductance; Wet etching;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1984.25889
  • Filename
    1484265
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1096634