DocumentCode :
1096642
Title :
Contact resistance of LPCVD W/Al and PtSi/W/Al metallization
Author :
Swirhun, S. ; Saraswat, K.C. ; Swanson, R.M.
Author_Institution :
Stanford University, Stanford, CA
Volume :
5
Issue :
6
fYear :
1984
fDate :
6/1/1984 12:00:00 AM
Firstpage :
209
Lastpage :
211
Abstract :
The sensitivity of measured specific contact resistivity to surface doping concentration has been investigated for selectively deposited LPCVD W contacts to n+ and p +Si with surface concentrations from 1018to 1020cm-3. W contact resistance to n+ Si is about a factor of 20 lower than that of Al; W contact resistance to p +Si is comparable to that of Al. Ultralow resistance, stable contacts with self-aligned PtSi, and W to p +Si are demonstrated.
Keywords :
Artificial intelligence; Conductivity; Contact resistance; Doping; Electrical resistance measurement; Metallization; Ohmic contacts; Silicon; Surface resistance; Testing;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/EDL.1984.25890
Filename :
1484266
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1096642
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