• DocumentCode
    1096642
  • Title

    Contact resistance of LPCVD W/Al and PtSi/W/Al metallization

  • Author

    Swirhun, S. ; Saraswat, K.C. ; Swanson, R.M.

  • Author_Institution
    Stanford University, Stanford, CA
  • Volume
    5
  • Issue
    6
  • fYear
    1984
  • fDate
    6/1/1984 12:00:00 AM
  • Firstpage
    209
  • Lastpage
    211
  • Abstract
    The sensitivity of measured specific contact resistivity to surface doping concentration has been investigated for selectively deposited LPCVD W contacts to n+ and p +Si with surface concentrations from 1018to 1020cm-3. W contact resistance to n+ Si is about a factor of 20 lower than that of Al; W contact resistance to p +Si is comparable to that of Al. Ultralow resistance, stable contacts with self-aligned PtSi, and W to p +Si are demonstrated.
  • Keywords
    Artificial intelligence; Conductivity; Contact resistance; Doping; Electrical resistance measurement; Metallization; Ohmic contacts; Silicon; Surface resistance; Testing;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1984.25890
  • Filename
    1484266
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1096642