• DocumentCode
    1096659
  • Title

    High-frequency characteristics of AlGaAs/GaAs heterojunction bipolar transistors

  • Author

    Ito, H. ; Ishibashi, T. ; Sugeta, T.

  • Author_Institution
    Nippon Telegraph and Telephone Public Corporation, Kanagawa, Japan
  • Volume
    5
  • Issue
    6
  • fYear
    1984
  • fDate
    6/1/1984 12:00:00 AM
  • Firstpage
    214
  • Lastpage
    216
  • Abstract
    The fabrication and high-frequency performance of MBE-grown AlGaAs/GaAs heterojunction bipolar transistors (HBT´s) is described. The achieved gain-bandwidth product fTis 25 GHz for a collector current density Jcof 1 × 104A/cm2and a collector-emitter voltage VCEof 3 V.fTcontinues to increase with the collector current in the high current density region over 1 × 104A/cm2with no emitter crowding effect nor Kirk effect. The limitation on fTin fabricated devices is found to be caused mainly by the emitter series resistance.
  • Keywords
    Bipolar transistors; Current density; Cutoff frequency; Epitaxial layers; Fabrication; Gallium arsenide; Heterojunction bipolar transistors; Kirk field collapse effect; Molecular beam epitaxial growth; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1984.25892
  • Filename
    1484268
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1096659