Title :
Formation of a TiSi2/n+poly-Si layer by rapid lamp heating and its application to MOS devices
Author_Institution :
Nippon Telegraph and Telephone Public Corporation, Tokyo, Japan
fDate :
7/1/1984 12:00:00 AM
Abstract :
Ti-Si thin films, co-sputter deposited from a titanium and a poly-Si target, have been rapidly lamp heated within 10 s to produce uniform highly conductive layers comparable to furnace-heated films. MOS devices are fabricated using this Ti-Si rapid lamp heating. It is shown that rapid lamp heating results in much lesser failure involving gate oxide breakdown voltage compared to furnace heating. MOSFET´s also exhibit excellent device characteristics.
Keywords :
Conductive films; Conductivity; Fabrication; Furnaces; Heating; Lamps; MOS devices; Silicides; Silicon; Titanium;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1984.25895
