• DocumentCode
    1096705
  • Title

    Formation of a TiSi2/n+poly-Si layer by rapid lamp heating and its application to MOS devices

  • Author

    Yachi, T.

  • Author_Institution
    Nippon Telegraph and Telephone Public Corporation, Tokyo, Japan
  • Volume
    5
  • Issue
    7
  • fYear
    1984
  • fDate
    7/1/1984 12:00:00 AM
  • Firstpage
    217
  • Lastpage
    220
  • Abstract
    Ti-Si thin films, co-sputter deposited from a titanium and a poly-Si target, have been rapidly lamp heated within 10 s to produce uniform highly conductive layers comparable to furnace-heated films. MOS devices are fabricated using this Ti-Si rapid lamp heating. It is shown that rapid lamp heating results in much lesser failure involving gate oxide breakdown voltage compared to furnace heating. MOSFET´s also exhibit excellent device characteristics.
  • Keywords
    Conductive films; Conductivity; Fabrication; Furnaces; Heating; Lamps; MOS devices; Silicides; Silicon; Titanium;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1984.25895
  • Filename
    1484271
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1096705