A Novel Electrically Tunable RF Inductor With Ultra-Low Power Consumption

Author

Cho, Ming-Hsiang ; Wu, Lin-Kun

Author_Institution

Nat. Chiao Tung Univ., Hsinchu

Volume

18

Issue

4

fYear

2008

fDate

4/1/2008 12:00:00 AM

Firstpage

242

Lastpage

244

Abstract

In this study, we propose for the first time an electrically and continuously tunable RF inductor using grounded metal oxide semiconductor (MOS) transistor as a control device. By adjusting the output resistance of the grounded MOSFET, the ground-return current can lead to a significant variation in series inductance. This proposed inductor structure was implemented in a standard CMOS process and characterized up to 30 GHz, which demonstrates maximum inductance variations of 32% and 58% at 5.8 and 18 GHz, respectively. The dc power consumption of the proposed design is kept within 50 muW over the entire tuning range.

Keywords

CMOS integrated circuits; MMIC; circuit tuning; inductors; low-power electronics; CMOS process; continuously tunable RF inductor; control device; dc power consumption; electrically tunable RF inductor; frequency 18 GHz; frequency 5.8 GHz; ground-return current; grounded MOSFET; ultra-low power consumption; Eddy current; inductor; metal oxide semiconductor field effect transistor (MOSFET); radio frequency (RF); silicon; tunable;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2008.918878

Filename

4469927