Title :
A Novel Electrically Tunable RF Inductor With Ultra-Low Power Consumption
Author :
Cho, Ming-Hsiang ; Wu, Lin-Kun
Author_Institution :
Nat. Chiao Tung Univ., Hsinchu
fDate :
4/1/2008 12:00:00 AM
Abstract :
In this study, we propose for the first time an electrically and continuously tunable RF inductor using grounded metal oxide semiconductor (MOS) transistor as a control device. By adjusting the output resistance of the grounded MOSFET, the ground-return current can lead to a significant variation in series inductance. This proposed inductor structure was implemented in a standard CMOS process and characterized up to 30 GHz, which demonstrates maximum inductance variations of 32% and 58% at 5.8 and 18 GHz, respectively. The dc power consumption of the proposed design is kept within 50 muW over the entire tuning range.
Keywords :
CMOS integrated circuits; MMIC; circuit tuning; inductors; low-power electronics; CMOS process; continuously tunable RF inductor; control device; dc power consumption; electrically tunable RF inductor; frequency 18 GHz; frequency 5.8 GHz; ground-return current; grounded MOSFET; ultra-low power consumption; Eddy current; inductor; metal oxide semiconductor field effect transistor (MOSFET); radio frequency (RF); silicon; tunable;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2008.918878
