• DocumentCode
    1096750
  • Title

    An empirical fit to minority hole mobilities

  • Author

    Burk, D.E. ; de la Torre, V.

  • Author_Institution
    University of Florida, Gainesville, FL
  • Volume
    5
  • Issue
    7
  • fYear
    1984
  • fDate
    7/1/1984 12:00:00 AM
  • Firstpage
    231
  • Lastpage
    233
  • Abstract
    Minority hole mobilities in highly-doped n-type silicon are determined by electron-beam-induced current measurements. They are used in conjunction with existing data taken from the literature to derive an empirical expression for the minority hole moblility as a function of majority-carrier density 1014cm-3≤ ND≤ cm-3. It is anticipated that this empirical fit will be valuable in device modeling.
  • Keywords
    Current measurement; Electron beams; Frequency measurement; Length measurement; Mechanical variables measurement; Neodymium; Scanning electron microscopy; Silicon; Spontaneous emission; Statistical analysis;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1984.25900
  • Filename
    1484276
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1096750