DocumentCode :
1096760
Title :
Study of the effective grain boundary recombination velocity under different injection levels
Author :
De Pauw, P. ; Mertens, R. ; Van Overstraeten, R. ; Leuven, K.U.
Author_Institution :
MIETEC, Antwerpen, Belgium
Volume :
5
Issue :
7
fYear :
1984
fDate :
7/1/1984 12:00:00 AM
Firstpage :
234
Lastpage :
237
Abstract :
The recombination activity of a grain boundary, is usually expressed by an effective recombination velocity seffdefined at the grain boundary depletion layer edge. While theory shows that seffdecreases with increasing injection levels, experiments however could not clearly confirm this theoretical expectation. In this letter a new method to measure seffas a function of the injection level is proposed. Using this method, strong direct experimental evidence for a decreasing seffwith the injection level is given.
Keywords :
Conductivity; Current measurement; Grain boundaries; Helium; Integrated circuit measurements; Laboratories; Photovoltaic cells; Silicon; Space charge; Spontaneous emission;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/EDL.1984.25901
Filename :
1484277
Link To Document :
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